V. Morandi - IMM Bologna

Micro- e nano-tecnologie di fabbricazione
per lo spazio, dal silicio al grafene
Vittorio Morandi
Via Gobetti 101, 40129 Bologna
Email : [email protected]
“La Componentistica Nazionale per lo Spazio: stato dell’arte, sviluppi e prospettive”
Primo Workshop Nazionale – 18‐20 Gennaio 2016
IMM: Institute for Microelectronics and Microsystems
Institute for Microelectronics and Microsystems
Director : Guglielmo Fortunato
Units:
Catania
Catania Uni
-
Bologna
Lecce
Napoli
Roma
Agrate (MI) -
Headquarter
Director: A. Terrasi
Director: V. Morandi
Director: P. Siciliano
Director: M. Iodice
Director: L. Mariucci
Director: G. Tallarida
AGRATE (MI)
BOLOGNA
ROMA
NAPOLI
LECCE
Total permanent staff:
117 researchers
78 admins and technicians
> 100 fellows & PhD students
CATANIA
2
IMM Research Activities
http://www.imm.cnr.it
Research Activities @ IMM
1. Nanostructured materials 2. Materials and devices for Information Storage and Processing 3. MEMS and MOEMS 4. Flexible and Large area electronics 5. Materials and processes for RF and Power Devices
6. Energy conversion devices 7. Photonic materials and devices 8. Sensors and multifunctional micro/nanosystems
9. Micro and Nanoscale characterization and imaging
10. Theory, numerical simulation and modelling 3
CNR-IMM Bologna
CNR‐IMM Bologna
Director: Vittorio Morandi
http://www.bo.cnr.it
http://www.bo.imm.cnr.it
IMM Bologna is located in the CNR Research Area of Bologna (8 research institutes employing about 440 people)
4
Research activities @ IMM Bologna
Devices, materials and
processes for
• Microelectronics
• Sensors and
microsystems
• Photovoltaic and
optoelectronic
devices
Diagnostic and
characterization
techniques
• Electron
microscopy
• X-ray diffraction
• Carbon-based
nanomaterials
500 m2 (250 m2 class 100) MEMS and CMOS Clean-Room
5
Research activities @ IMM Bologna
Devices, materials and
processes for
• Microelectronics
• Sensors and
microsystems
• Photovoltaic and
optoelectronic
devices
Diagnostic and
characterization
techniques
• Electron
microscopy
• X-ray diffraction
• Carbon-based
nanomaterials
Clean-Room facilities
•
•
•
•
•
•
•
•
•
•
•
•
•
Furnaces for oxidation, doping and annealing
LPCVD and multichamber PECVD reactors
Hot-wall and cold-wall CVD reactors
Sputtering and evaporators
Excimer laser deposition system
Reactive Ion Etchers (RIE) and Deep RIE for Si and glass
Medium and high energy ion implanters
Rapid Thermal Process system
Front and front-to-back side mask aligner, with
Nanoimprint attachment (MA/BA6 Karl-Süss)
Wet anisotropic silicon etching systems (KOH, TMAH)
Wafer bonder
Wafer dicing and wire bonding system
ZEISS CrossBeam 340 FIB/SEM with Raith EBL
500 m2 (250 m2 class 100) MEMS and CMOS Clean-Room
6
Research activities @ IMM Bologna
Devices, materials and
processes for
• Microelectronics
• Sensors and
microsystems
• Photovoltaic and
optoelectronic
devices
Diagnostic and
characterization
techniques
• Electron
microscopy
• X-ray diffraction
• Carbon-based
nanomaterials
Structural and functional characterization facilities
7
Research activities @ IMM Bologna
Devices, materials and
processes for
• Microelectronics
• Sensors and
microsystems
• Photovoltaic and
optoelectronic
devices
Diagnostic and
characterization
techniques
• Electron
microscopy
• X-ray diffraction
• Carbon-based
nanomaterials
Structural characterization
•
•
•
•
•
•
FEI Tecnai F20 FEG-TEM (with STEM, EDS, PEELS)
ZEISS LEO Gemini 1530 FEG-SEM (with EDS)
ZEISS EVO LS10 environmental SEM (with EDS)
Rigaku SmartLab (9kW rotating anode X-ray generator)
diffractometer
High voltage ion accelerator for ion beam analysis
JEOL ARM 200F STEM Cs-corrected (with EDS and
EELS) [remotely controlled]
Electrical characterization
•
•
•
Automatic
measurement
systems
for
electrical
characterization of devices at wafer level
Instrumentation setup for standard electromigration life
test and high resolution resistometric characterization of
metal lines
Systems for functional characterization of gas sensors
Structural and functional characterization facilities
8
Sensors and Microsystems @ IMM Bologna
Sensors and Microsystems @ IMM Bologna
•
•
Physical transducers
– Single Photon Avalanche Diodes
– SiC microelectronic devices
– Inkjet Printheads microelectronics
– Bolometers, thermopiles
– Strain sensors
– Photovoltaic cells
– Harsh environment pressure
sensors
Microfluidics
– Minithrusters
– Microvalves
– Liquid handling for industrial
applications
•
Chemical sensors
– Micromachined gas sensors
– Gas chromatographics (GC)
microsystems
•
Nanostructured materials
– Carbon nanotubes: electron
emitters
– Graphene: transparent
conductive layers
– Silicon nanowires: thermoelectric
transducers
•
Device characterization
– Functional characterizion
– Electrical characterization
– Noise evalutaion
9
Alcuni spunti dagli interventi dei giorni scorsi …
•
M. Molina @ Finmeccanica : “Componentistica italiana per lo
Spazio: sviluppi e prospettive sostenibili” – 18.01.2016
… importanza di unire e sfruttare competenze provenienti anche da
ambiti diversi da quello spaziale
•
R. Formaro @ ASI : “Attivita’ dell’Agenzia - Nuovo Bando
Componentistica” – 19.01.2016
Collaborazione con organismi di ricerca : avvio di progetti con organismi
di ricerca (…) ove si individuino obiettivi comuni e eccellenze a livello del
sistema nazionale
Mantenimento della Filiera e domini tecnologici strategici : eventuale
implementazione di nuovi domini
10
MOMS fiber-optic ultrasound probes / 1
Ultrasonic
source
Ultrasonic
detector
•
•
•
•
High frequency and wide band
Miniaturization
Microscopic tissue characterization
Minimally invasive intervention Pencil tip
MOMS emitter
Endoscope
MOMS emitter
Fabricated in
micromachined
Si and Si3N4
Syringe needle
Contact person: Alberto Roncaglia
([email protected])
11
MOMS fiber-optic ultrasound probes / 2
Ultrasound emitter
Ultrasound detector
Ultrasound wave
Ultrasound wave
Carbon film
Polymer
Metal 2
Metal 1
Si
Pulsed Laser beam
I
Continuous
Laser Beam
3‐D acoustic field of ultrasound emitter
th
Contact person: Alberto Roncaglia
([email protected])
Detector sensitivity vs. commercial hydrophone
Sensibility (dB mV/Mpa)
Optical fiber
Frequency (MHz)
12
d Gas Chromatographic System
ET: fast analysis cycles, minimal dead volumes, low costs and high portability for in-field use
loop
sampling
pump
Detector
GC separation column
Injection
system
Fused silica capillaries
lary Microcolumn
ng, 100µm
nd 3.2m75µm I.D.
nductivity Detector (TCD)
SS SECTION
con wafer
ex wafer (CHAMBER)
onolithic fabrication
500μm
BONDING
PADS
Silicon
SUSPENDED
STRUCTURES
REFERENCE
CHANNEL
SUSPENDED
STRUCTURES
500μm
BONDING
PADS
ANALYTICAL
CHANNEL
T WAFER LEVEL
Chip: 5 x 5 mm2
Fused silica capillaries (to interconnect the TCD
with reference column and analytical column)
nators as strain sensors / 1
nant strain sensors on thick SOI
(25 m, gap < 0.5 m)
Readout electronics for
MEMS strain sensors
Anchors
Actuation
electrodes
Suspended
fork
onolithic fabrication and vacuum
encapsulation at wafer level
MEMS oscillator
Frequency counter and control electronics
•
•
ator
Vacuum
encapsulation
•
1 ppm frequency resolution achievable in 20 ms acquisition time by using 40 MHz clock oscillator
Overall power dissipation: around 100 mW
High speed data nators as strain sensors / 2
Axial load
Calibrated
Amplitude Spectrum
[db] [db]
Calibrated
Amplitude
Spectrum
Resonance frequency shift
-50
-50
-60
-60
-70
-70
-80
-80
No
Strain)
No
Strain
72 strain
-90
-90
437000
437000
438000
438000
Frequency [Hz]
[Khz]
[Hz]
Frequency
[Khz]
MEMS
C2
Self‐sustained
oscillation
at resonance
Strain‐dependent
oscillator
Q factor of vacuum packaged resonator
33000
nators as strain sensors / 3
test (tensile strain) on onacuum packaged resonator
in closed loop:
Calibration curve (tensile/compressive
strain) on on-chip vacuum packaged
resonator in closed loop:
268.3
2.33 
268.2
Resonance frequency [kHz]
1.86 
1.4 
0.93 
0.47 
Sensitivity= 120 Hz/
data
linear fit
268.1
268
267.9
267.8
267.7
40
60
Time [s]
80
100
sor resolution vs.
quisition time &
parison with metal
strain gauge:
267.6
-2.5
120
-2
-1.5
-1
-0.5
0
0.5
Strain [ ]
1
1.5
2
-1
10
Strain resolution limit []
20
Metal strain gauge
Resonant sensor
-2
10
-3
10
≈ 150 pε
Contact person: 2.5
on Avalanche Diodes (SPAD)
SPAD requirements:
d Quantum Efficiency
noise at room T
second timing
y low dark count level
t person: Piera Maccagnani
[email protected]) Ultra-sensitive light detectors:
- Planar fabrication process (IC technology)
- Low-cost
- High reliability
- Robust and rugged
- Low bias voltage : 20V to 40V
- Low power : cooling not necessary
lettura di fibre scintillanti
SPAD per la Lettura di fibre scintillanti
Contratto ASI N. I/039/09/0
Programma ASI
Scientifico CNR
‐
‐
Danilo Rubini ([email protected])
Piera Maccagnani ([email protected])
CNR ‐ IMM Bologna (Coordinator), Politecnico di Milano, Dpt. Ing. Elettronica, IASF‐
Bologna, Università dell’Insubria, Micro Photon Devices a: 24 mesi
tivo: Studio e realizzazione di un prototipo di rivelatore basato su fibre scintillanti con a mediante SPAD.
3m fibra scintillante
Modulo di conteggio
Modulo di conteggio
Connettore – le sfide del progetto
e IMM nel progetto:
uppare una tecnologia SPAD-CUSTOM MOS compatibile
bricare SPAD planari con grandi aree attive
nire una alternativa agli SPAD commerciali ( = 180 m, molto costosi)
ostrare l’interfacciamento con fibre scintillanti
re a nuove applicazioni utilizzando un’ottica semplificata
L’accoppiamento SPAD-SCIFI
SPAD
SCIFI
Peltier
SCIFI:  = 500 m
bonding
– i risultati
otti del progetto:
ector SPAD in Si a basso costo, con grande area attiva, basso
more intrinseco, sensibilità al singolo fotone
AD utilizzabili in applicazioni spaziali in Low Eearth Orbit a bassa
inazione (< 10o)
C-iAQC in tecnologia da 0.35mm HV-CMOS utilizzabili in
licazioni spaziali
duli di rivelazione SCIFI+SPAD compatti, resistenti, veloci (timing ≈
ps), con efficienza alla MIP > 90%
uperlatives
nest imaginable material
gest material ever measured (theoretical limit, 130 Gpa)
st known material (stiffer than diamond, 1 Tpa)
stretchable crystal (up to 20% elasticity)
rd thermal conductivity (outperforming diamond)
est current density at room T (million times those of copper)
est intrinsic mobility (100 times more than Si, more than 15000 Vs)
uct electricity in the limit of zero electrons
est charge carriers (zero rest mass)
est mean free path at room T (micron range)
impermeable (even He atoms cannot squeeze through)
pplications
r Space
ene
osites
Graphene‐based composites
pplications and Commericialization
al roadmap
Launched in 2013, the Graphene Flagship is the EU’s biggest ever research
initiative. With a budget of €1 billion, it represents a new form of joint,
coordinated research on an unprecedented scale.
The Graphene Flagship is tasked with bringing together academic and
industrial researchers to take graphene from the realm of academic
laboratories into European society in the space of 10 years, thus generating
economic growth, new jobs and new opportunities.
graphene‐flagship.eu/
ce and technology roadmap for ne, related two‐dimensional s, and hybrid systems”
rrari, V.M. et al.
cale 7 (2015) 4598‐4810
0.1039/C4NR01600A
of “killer applications” ?
Andre Geim: Graphene’s buzz has spread
The father of graphene talks to Nature about 2D materials, George Osborne, and the business of science.
http://www.nature.com/news/andre‐geim‐graphene‐
s‐buzz‐has‐spread‐1.17861
(26 June 2015)
raphene need a ‘killer app’ now to justify the money being poured into it?
is important about graphene is the new physics it has delivered.
e one day, 5 or 10 years from now, it will bring real applications.
d I try to apologize for the lack of killer applications so far? There
many international graphene companies already. So there is
The worldwide patent landscape in 2015
and technological implementation
Integration in standard Si‐based technological processes
roup @ IMM Bologna
hene Technology
growth
mical synthesis/functionalization
/SEM advanced characterization
techniques
nological processes – MEMS/NEMS
modelling
e :
t Person: Vittorio Morandi ([email protected])
nent Staff: Rita Rizzoli, Alberto Roncaglia, n Degli Esposti‐Boschi, Piera Maccagnani
erm Staff: Luca Ortolani, Luca Belsito, Fabiola Liscio, ne Christian, Marica Canino
udent: Raffaello Mazzaro, Martina Pittori
Clean Room TEM CVD ynthesis by CVD
stems characteristics
wall CVD system: Ø 4”, TMAX = 800°C
ll CVD system: Ø 2”, TMAX = 1000°C
es max. dim.: 30x60mm2 (60x60 mm2
)
mes: APCVD, LPCVD, UHV
Ar, N2, H2, NH3, CH4, C2H2, O2
m: down to 10-7 - 10-8 mbar
rameters to control synthesis
rature
tock partial pressure and gas mixture
esis duration
st structure (facets, annealing step…)
Cu
foil
Cu
evaporated
LP‐CVD
AP‐CVD
cedure on different substrates
FeCl3/HCl
HNO3
[ X. Li et al., Nano Lett. 9 (2009) , 4359 ]
[ K.S. Kim et al., Nature 457 (2009) , 706 ]
Si, fused silica, patterned Si, TEM grids, Kapton, PET, SU8
1‐3 layers
Transparent Conductive Electrode (TCE)
Graphene vs different TCEs
Bonaccorso et al. Nature Photonics 4 (2010), 611 ]
ctance
s
ding
Different graphenes (and ITO)
R□ ≈ 102 Ω/□
T ≈ 90 - 95 %
[ S. Bae et al. Nature Nanotechnology 5 (2010), 574 ]
emperature processes : motivations
me of a 3rd generation solar cell: tandem cell nanostructured material as top absorber
Transparent Conductive Electrode should sustain processes up to 1100°C
1 junction
Solar Power
rication of Si ocrystals by ans of high‐T al treatment of i rich SiO2
NASCEnT: SILICON NANODOTS FOR SOLAR CELL TANDEM
2 junction
3 junction
phene TCE‐based solar cells comparison
ene TCE can in processes o 1100°C ut significant gradation ketch of the i‐n solar cell ntegrating phene as TCE
AM1.5G
1 cm2 active area
annealed sample
high Rsheet
better band with Graphene Gate Electrode / 1
Energy levels of the p‐type (DH‐
4T with BeBq2:Ir(piq)3) and n‐
type (DHF‐4T) layers
number of G layers
matics of the three‐organic light g BG‐TC transistor with graphene‐
based gate electrode ITO FGL ene and few‐graphene layer (FGL) m x 15 mm), grown by CVD on Cu, Resistance between two electrodes is around 1 to 3 kΩ (as compared to 0.5 kΩ for ITO – t = with Graphene Gate Electrode / 2
sulated G‐OLET device
626 nm
666 nm
ted light can be modulated gate voltage (in terms of ization and spatial extent) Device in the ON state at VGS
= VDS = ‐100 V
C. Soldano, V.M. et al. ACS
Photonics 1 (2014) 1082−1088
Electroluminescence (EL) of the G‐OLET device compared with the photoluminescence (PL) of Ir(piq)3
Emitted light for VG = const (‐ 100 V) as a function of the VD
omachining : Graphene-based devices for thermal sensing / 1
MEMS devices for bolometric sensing
Fong. et al., Phys. Rev. X 2, 031006 (2012)
mal absorber
Ph
Si-micromachined
cavity
hene
∆T
perature Coefficient of Resistance
R
Re 1
Re T
Re
 TCR T
Re
Thermal Signal:
T  RT  Ph
1 L
RT 
kT tW
Electrical Noise:
Vn  4kBTRef
L
Re  
tW
~ 10-6 Ωcm
≈ 0.3 nm
re process flow
2. Si3N4 deposition (50nm)
3. SiO2 deposition
N4 deposition (50nm)
5. Si3N4 patterning
6. G transfer and patterning
. Platinum lift-off
8. Si DRIE (500 µm)
9. HF vapour release
1. Si wafer
ogical integration at a wafer level
al coefficient of resistance
Wafer‐level integration
Amperometric pads
TCR = ‐2.6 x 10‐4 oC‐1
Graphene
PHOTORESIST
GRAPHENE
SUBSTRATE
Voltmetric pads
Litography
Seeback coefficient
Lithography Process
PHOTORESIST
GRAPHENE
SUBSTRATE
Oxygen Plasma
PHOTORESIST
PHOTORESIST
GRAPHENE
SUBSTRATE
Solvents & Annealing
riven GrapHene On Silicon Technology (ReD GhOST) / 1
ility-Driven Graphene On Silicon Technology (ReD GhOST)
chematic diagram of a
ene/Silicon Schottky diode
• Design for Reliability (RED), a set of protocols
and procedures for granting the evolving new
technology with an intrinsically embedded longterm survival
• Designing, manufacturing, characterizing and
testing the building blocks (diodes, transistors,
capacitors, resistors) and their interconnects of a
full Graphene On Silicon Technology (GhOST)
hene-Semiconductor Junction as a
g platform for monolithic integration of
ene-based devices onto Si
ojunction Solar Cell devices will be used
t bench to evaluate and demonstrate the
mance of the optimized Schottky junction
re-Mechanism-Oriented-Stress-Tests
riven GrapHene On Silicon Technology (ReD GhOST) / 2
RED-GhOST will alternate manufacturing
esting, feeding each with the result of the
ability of the two units to handle the Project
om their perfectly complementary activities
cal Reliability (DIEE) and Silicon and
e Technologies (IMM).
In collaboration with M. Vanzi, G. Mura (DIEE, Uni Cagliari)
Proposal submitted to PRIN2015 Call riven GrapHene On Silicon Technology (ReD GhOST) / 2
GhOST Main Objectives
t Process:
search for a patterning tool for the transferred G, that must be cost-effective,
hly reproducible, stable and suitable for batch processing;
study of the properties of the graphene-Si interface, in terms of electrical
aracteristics of the Schottky junction, extended up to the limit of ohmic
nduction;
characterization and engineering of the graphene-metal contact, crucial
ment for the interconnection with external world.
t Reliability:
estigating the Failure Physics of GhOST, individuating the main failure
chanisms, their accelerating factors, and their detectable influence on the
formances of the new devices;
sign of a suitable set of Life Tests for estimating Reliability as a function of time
d its most peculiar features;
a testbeds, GhOST Solar Cell (SC), optimized as both a stand-alone device
hat’s all ….
… AND THANK YOU FOR YOUR ATTENTION !!