Novel Materials and Devices for NEMS

Novel Materials and Devices for NEMS
MetNEMS Dissemination Workshop
Torino, 26 February 2015
In collaboration with
Sponsored by
SCOPE
This workshop will discuss the latest developments in:
- superconducting devices fabrication and characterization for Nano
ElectroMechanical Systems (SQUID, TES, SSPD…)
-
electromagnetic
coupling
nanostructures)
system
(nanoantennas,
-
novel materials for NEMS (graphene, MgB2…)
plasmonic
Within the workshop, there will be discussions and dissemination results of
the NEW08 project obtained so far. Furthermore, contributions from
industrial and academic groups related to this research area are welcome.
Local Organizers:
M. Rajteri
E. Monticone
C. Portesi
L. Lolli
E. Taralli
S. Giomi
Invited Speakers:
P. Biagioni (PoliMi, IT)
A. Casaburi (Un. of Glasgow, UK)
R. Cristiano (SPIN-CNR, IT)
R.S. Gonnelli (PoliTo, IT)
L. Hao (NPL, UK)
N. Klein (Imperial College, UK)
E. Romans (UCL, UK)
T. Schurig (PTB, D)
Location: INRIM,
Strada delle Cacce 91, 10135 Torino Italy
Further information:
www.inrim.it/luc/tes/WS2015.shtml
Novel Materials and Devices for NEMS
Workshop Program
26th February 2015, Turin
8:45 - 9:10
09:10
9:15
registration
Rajteri M.
(INRiM)
Opening
Rastello M.L.
(INRiM)
Welcome of INRiM Scientific Director
(NPL)
Metrology with/for NEMS
9:20 (i) Hao L.
9:50 - 11:30
Single Photon Detectors and Sources
chaired by Monticone E.
09:50 (i) Cristiano R.
(CNR SPIN - Napoli)
The material issue in SSPD
10:20 (i) Casaburi A.
(University of Glasgow)
SSPDs for advanced science applications
10:50
Degiovanni I.P.
(INRiM)
Sub-diffraction imaging of colour-centres in diamond
11:10
Lolli L.
(INRiM)
Photon counting with Transition-Edge Sensors
11:30 - 11:50 Coffee Break
Sponsored by LOT-Oriel
11:50 - 13:10 SQUID
chaired by Hao L.
11:50 (i) Schurig T.
(PTB - Berlin)
MicroSQUIDs - a practical tool for quantum detection
and material characterization in the micro- and
12:20 (i) Romans E.
(London Centre for
Nanotechnology)
NanoSQUIDs at Ultralow Temperatures
12:50
(INRiM)
Ultra High sensitive nanoSQUIDs fabrication
Fretto M.
13:10 - 14:30 Lunch
14:30 - 15:10 Metal Oxide-Based Devices
chaired by Gonnelli R.
14:30
Pellegrino L.
(CNR SPIN - Genova)
Microelectromechanical System Devices with
Crystalline Transition Metal Oxides
14:50
Hatano T.
(Nagoya UniversityJapan)
Field-induced modulation of electronics proprietes of
strongly correlated oxides
15:10 - 16:00 Plasmonic nanostructures
chaired by Giorgis F.
15:10 (i) Biagioni P.
(Politecnico di Milano)
Nanoantennas for visible and IR radiation
15:40
(Politecnico di Torino)
Smart plasmonic metaldielectric nanostructure for
surface enhanced Raman scattering
Virga A.
16.00 - 16.40 Coffee Break & Poster Session
Sponsored by CryoVac
16.40 - 18:00 Graphene
chaired by Rossi A.M.
16:40 (i) Klein N.
(Imperial College of
London)
17:10 (i) Gonnelli R.
(Politecnico di Torino)
17:40
(INRiM)
20:30
Esposito P.
Microwave field effect in graphene
The temperature dependence of electric transport in
few-layer graphene under large charge doping
induced by electrochemical gating: scattering and
Graphene-enhanced Raman Spectroscopy on
diagnostic biomarkers
social dinner
oral presentation: 15 minutes plus 5 minutes of discussion, (i) invited talk: 25 minutes plus 5 minutes
Metrology with/for NEMS
Hao Ling
National Physical Laboratory, Middlessex, UK
[email protected]
Abstract
Micro electromechanical systems (MEMS) are already well established in consumer products and industry demand for increased complexity, speed and performance is driving size reduction towards NanoElectro-Mechanical Systems (NEMS) . NEMS is a new key disruptive
technology providing potential solutions to industry to a range of technological barriers over a wide spread of sectors, from ICT through physical
sensors to biological sensor applications. As the dimensions of devices
and structures reduce, new technologies and approaches are required.
These developments will both enable and demand innovative metrology,
impacting strongly over a range of sectors. To date there has been almost no metrological activity to anticipate the impending metrological
needs which exploitation of NEMS will produce.
The MetNEMS project seeks to meet these challenges by focussing
on developing novel high frequency, high performance nanoscale mechanical resonators and actuators, aimed at both metrology and industrial applications including ultra-sensitive mass, force, displacement and
temperature sensing at the nanoscale, single photon & single molecule
measurement. As well as integrated nanoscale charge sensors this work
will facilitate ultra-stable and miniaturised voltage references. The talk
will give an overview of the MetNEMS project progress and future challenges .
The material issue in SSPD
Roberto Cristiano
CNR-SPIN, Napoli, Italy
[email protected]
Abstract
Superconducting single-photon detectors (SSPD) based on nanostrips is an emergent technology which is rapidly achieving unprecedented performances: single photon sensitivity in the 0.5-3.0 micron
range with detection efficiency above 90%, dark count rate below 1
kHz, dead time of a few nanoseconds, and timing jitter as low as 20
ps. These characteristics are attractive for several applications from
quantum information, to metrology, from atmospheric remote sensing to
biological/medical sensing of ultra weak IR photon sources. For long
time niobium nitride has been the material of choice for SSPD. Recently, alternative materials like NbTiN or WSi have been proposed.
New superconducting materials could improve the quantum efficiency,
simplify the fabrication technology, could be grown as amorphous films
for a better compatibility with substrates which have interesting optical
properties. The material requirements for SSPDs and the recent results
reported in literature will be overviewed. I will also present our efforts
and results in the exploration of new materials.
SSPDs for advanced science applications
Alessandro Casaburi
University of Glasgow, UK
[email protected]
Abstract
Advances in materials growth and nanopatterning have enabled the
creation of a new class of ultra-sensitive optical detector: the superconducting nanowire single-photon detector (SNSPD) [1]. These devices
offer exquisite sensitivity and low noise at infrared wavelengths, far outperforming off-the-shelf alternatives such as semiconductor avalanche
photodiodes and photomultiplier tubes [2]. The potential of SNSPDs
has been demonstrated in a range of important scientific applications,
including quantum cryptography [3], remote sensing [4] and laser-based
cancer treatment [5]. Our efforts are focussed on the development of next
generation SNSPDs employing state-of-the-art nanofabrication techniques, sensor configurations and innovative materials. We will review
the results obtained with these innovative sensors in the recent years
and describe how these devices can be modified to satisfy the stringent
requirements of future applications. In this work, we will give a short
overview on our recent results concerning direct detection of singlet
oxygen luminescence [6], fibre Raman temperature sensing [4, 7] timeof-flight depth imaging [8]. Moreover we will present also the results
on the realization and characterization of a 2x2 SNSPDs array [9] to
scale up the sensitive area of the detector at 60x60 m2 for multimode
fibre optical coupling on the perspectives for next future applications in
frontier.
References
[1]
[2]
[3]
[4]
[5]
[6]
[7]
[8]
[9]
C. M. Natarajan et al Supercond. Sci. and Technol., 25 063001 (2012).
R. H. Hadfield, Nature Photonics,3 696 (2009).
H. Takesue et al Nature Photonics 1 343 (2007).
M. G. Tanner et al Applied Physics Letters 99 201110 (2011).
N. R. Gemmel et al Optics Express 21 5005 (2013).
N.R. Gemmellet al, Optics Express 21, 5005-5013 (2013).
S. D. Deyer et al, Optics Express 20, 3456 (2012).
A. McCarthy et al, Optics Express 21,8904-8915 (2013).
A. Casaburi et al IEEE Expl., Photonics technologies, Proc. Fotonica AIET
Italian Conference (2014), DOI: 10.1109/Fotonica.2014.6843851
Sub-diffraction imaging of colour-centres
in diamond
I.P. Degiovanni1 , J. Forneris2 , P. Traina1 , D. Gatto Monticone2 , A.
Tengattini2,3,4 , K. Katamadze5 , I. Ruo Berchera1 , G. Brida1 , E. Moreva1 , M.
Genovese1,4 and P. Olivero2,3,4
1 Optics
Division, Istituto Nazionale di Ricerca Metrologica (INRiM), Torino, Italy
2 Physics
[email protected]
Department, University of Torino, Italy
3 M. V. Lomonosov Moscow State University, Russia
Abstract
The precise knowledge of the position of single-photon emitters, such
as e.g. colour centres in diamond, below the limit imposed by optical
fluorescence microscopy is of great importance to test the fabrication of
strongly-coupled single-photon emitters for entanglement experiments.
Several methods permitting to overcome the diffraction limit in optical
microscopy are nowadays available, like STimulated Emission Depletion
(STED [1]) and Ground State Depletion (GSD, [2]): possible complications for these techniques are the use of doughnut-shaped illumination
beams and the high pump intensities required.
In this talk we present an experiment exploiting the photon antibunching behaviour of single photon emitters to enhance the resolution
of optical fluorescence microscopy of single colour centres in diamond
[3, 4].
Optical microscopy images of colour centres in bulk diamond grown
exploiting Chemical Vapour Deposition (CVD) techniques were acquired
on a pixel-by-pixel basis using a laser scanning confocal microscope.
Together with the direct measurement of the numbers of detected photon, we show that by acquiring higher-order autocorrelation function
(g(n) ) -exploiting, e.g., a detector tree [5] or, equivalently, an higher
order Hanbury-Brown-Twiss interferometer-resolution enhancement is
achieved.
Results show an increase in lateral resolution in agreement with
theory that predicts a narrowing of the point spread function proportional
to the square root of the highest order of the autocorrelation function
measured [3].
Figure 1: a) Standard confocal image of three colour centres (NV in a bulk
synthetic diamond). b) and c) Super-resolved image exploiting autocorrelation
function g(n) up to at n = 2 and n = 3, respectively.
References
[1]
[2]
[3]
[4]
[5]
S. W. Hell, J. Wichmann; J. Opt. Lett. 19 780 (1994).
S. W. Hell and M. Kroug; Appl. Phys. B 60 495 (1995).
O. Schwartz and D. Oron; Phys. Rev. A 85 033812 (2012).
O. Schwartz et al.; Nano Lett 13 5832 (2013).
E. A. Goldschmidt et al.; Phys. Rev. A 88, 013822 (2013).
Micro-TES for photon counting
L. Lolli, E. Taralli, S. Giomi, C. Portesi, M. Rajteri and E. Monticone
Istituto Nazionale di Ricerca Metrologica INRIM, strada delle cacce 91, I-10135,
Torino, Italia
Abstract
Transitio–Edge Sensors (TESs) are very versatile superconducting
sensors capable to detect radiation from gamma-rays to visible and submillimeter wavelength. The intrinsic capability to measure the energy of
the absorbed photons and the related possibility to resolve the number of
incidents photons make TESs photon-number resolving (PNR) devices.
This property is very significant in a growing number of applications as
quantum optics [1], telecommunication [2, 3] as well as quantum metrology [4] and quantum technologies [5].
Quantum-based technologies need improved traceability and reliability of measurements at the level of a few photons. In this framework,
TESs could play a crucial role as the best PNR detectors available.
This presentation will shows the recent progresses on TESs fabricated at INRIM in terms of some of the most important single photoncounting detector parameters: very high energy resolution (∆E=0.11 eV)
[6], best optimization between energy resolution and time response [7],
maximum quantum efficiency obtained without using any optical structure deposited on the detector [8] and a new detector shape solution.
References
[1] Bell violation using entangled photons without the fair-sampling assumption,
M. Giustina et al, Nature 497, 227-230 (2013).
[2] Non-Gaussian operation based on photon subtraction using a photon-numberresolving detector at a telecommunications wavelength, Namekata Naoto et al,
Nature Photonics, 4 655 (2010).
[3] Conclusive quantum steering with superconducting transition-edge sensors,
Smith Devin H. et al, Nature Communications, 3 625 (2012).
[4] Self consistent, absolute calibration technique for photon number resolving detectors, Avella A. et al, Optics Express, 19 23249 (2011).
[5] Ti/Au TES as superconducting detector for quantum technologies, Lolli L. et al,
International Journal of Quantum Information, 9 405 (2011).
[6] High intrinsic energy resolution photon number resolving detectors, L. Lolli et
al, Appl. Phys. Lett. 103 041107 (2013).
[7] Fabrication and characterization of fast TESs with small area for single photon
counting, C. Portesi et al, IEEE Trans. Appl. Supercond., IN PRESS.
[8] Characterization of Optical Fast Transition-Edge Sensors With Optimized Fiber
Coupling, L. Lolli et al, IEEE Trans. Appl. Supercond. 23 2100904 (2013).
MicroSQUIDs - a practical tool for quantum
detection and material characterization in
the micro-and nanoscale
Thomas Schurig
Physikalisch-Technische Bundesanstalt, Berlin, Germany
[email protected]
Abstract
Micro-sized Superconducting Quantum Interference Devices (SQUIDs)
are very attractive tools for quantum metrology and material characterization. These sensors can be used for nanoscale magnetic detection
but in contrast to real nanoSQUIDs, conventional and hence, reliable
technology can be used to manufacture them.
After briefly reviewing the current status of micro- and nanoSQUID
technology, micro SQUID concepts will then be discussed. MicroSQUIDs
and small-area detection coils can be read-out favorably using SQUID
current sensors. Magnetic coupling of nano-sized samples to conventional SQUIDs, e.g. simple gradiometers or more complex devices as
fully integrated susceptometers, can be improved significantly by integrating nanoscale detection loops. The applicability of all these devices
will be demonstrated by giving application examples, e.g. susceptometry
of magnetic molecules, NMR and NEMS readout. The conventionally
made devices are intended for fabrication in moderate numbers to make
them available for a broader community.
NanoSQUIDs at Ultralow Temperatures
Edward Romans
London Centre for Nanotechnology, University College of London, UK
[email protected]
Abstract
NanoSQUIDs most commonly use Dayem bridges as Josephson elements. Well below the critical temperature, the electrical characteristics
of these bridges exhibit undesirable thermal hysteresis. This makes
proper thermal analysis an essential design consideration for optimising
nanoSQUID performance at ultralow temperatures. However the existing theoretical models for this hysteresis are not generally applicable to
nanoscale devices operating at ultralow temperatures. We have therefore developed a new analytic heat model which enables a more accurate
prediction of the thermal behaviour in such circumstances. We demonstrate that this model is in good agreement with experimental results
measured down to 60 mK.
Ultra High sensitive nanoSQUIDs
fabricated by FIB sculpting technique
Matteo Fretto
INRiM, Torino, Italy
[email protected]
Abstract
The nano superconducting quantum interference device (nanoSQUID)
is a powerful tool for nanoscience investigations. In this work, the main
features of niobium nanoSQUIDs fabrication based on deep submicrometric Josephson tunnel junctions will be presented. The superconductive nanosensor has been realized in two different configurations, with
an area loop of 0.2-0.4 µm2 and two square Josephson junctions having
a side length of 0.3 µm. The crucial steps of the fabrication process
have been performed using the focused ion beam (FIB) nanosculpting
technique. A full characterization of the nanosensor has been performed
including the measurement of the voltage swing, the voltage responsivity, the spectral density of the magnetic flux and spin noise. Due to
the good reliability and the high critical current modulation depth measured, the proposed nanoSQUID could offer a suitable tool for nanoscale
applications.
Microelectromechanical System Devices
with Crystalline Transition Metal Oxides
Luca Pellegrino
CNR-SPIN, Genova, Italy
[email protected]
Dipartimento di Fisica, Universitá di Genova, Italy
[email protected]
Abstract
I will focus on the fabrication of free-standing devices realized starting from all-oxide thin film heterostructures deposited by Pulsed Laser
Deposition. I will show some experiments performed using crystalline
oxide microcantilevers and free-standing microbridges with the aim of
studying the effects of strain on correlated oxides by mechanical deformation and exploring the possibility of efficiently driving phase transitions and oxygen exchange in oxides by Joule effect. In particular, I
will discuss our recent experiments performed on microcantilevers made
of VO2 a correlated oxide exhibiting a resistive/structural phase transition at 68 ◦ C, showing the realization of a multi-state resistive memory
and a micromechanical oscillator whose eigenfrequency can be tuned by
electrical current pulses.
References
[1] L. Pellegrino et al All-Oxide Crystalline Microelectromechanical Systems:
Bending the Functionalities of Transition-Metal Oxide Thin Films, Adv. Mater.,
vol. 21, pp. 2377-2381 (2009).
[2] L. Pellegrino et al Multistate memory devices based on free-standing VO2 /TiO2
microstructures driven by Joule self-heating, Adv. Mater., vol. 24, pp. 2929-2934
(2012).
[3] N. Manca et al Programmable Mechanical Resonances in MEMS by Localized
Joule Heating of Phase Change Materials, Adv. Mater., vol. 25, pp. 6430-6435
(2013).
Field-induced modulation of the electronic
properties on Strongly Correlated Oxides
Takafumi Hatano
Department of Crystalline Material Science, Nagoya University, Nagoya
464-8603, Japan;
RIKEN Center for Emergent Matter Science (CEMS), Wako 351-0198, Japan
[email protected]
Abstract
A field effect control of a metal-insulator transition in strongly correlated electron systems (SCES) has been one of the main topics in material science in the past decades. In this context, the electric double-layer
transistor (EDLT), an ionic liquid-gated FET, plays an important role in
terms of how the extremely-high electric fields can be applied for the
gate control of electronic phases. In this talk, the control of electronic
properties in EDLT devices on strongly correlated oxides such as perovskite manganites, vanadium oxides, and iron oxides, will be discussed.
A Half-doped manganite of Pr0.5 Sr0.5 MnO3 exhibits the strong competition between a ferromagnetic-metallic and an antiferromagneticinsulating phases[1]. The simultaneous application of gate voltage and
a magnetic field to this system leads to a peculiar response in the resistance. Indeed, the gigantic resistance switching with a mere 50 mV
tweaking of gate voltage was achieved[2]. On the other hand, a gate control of metal-insulator transition at room temperatures has been clearly
realized in VO2 -based FET. These results pave a way towards the realization of Mott-transistors[4]: a concept of phase-transition based FET,
which may solve the scaling limit and the power-consumption issue. Although the electrostatic carrier doping is a key to realize above results,
the utilization of the chemical reaction induced at the interface between
the ionic liquid and the channel materials would be also possible by
choosing the proper materials. The recent work for this topic, done on
iron oxides based devices, will be also discussed.
This research was supported by the Japan Society for the Promotion
of Science (JSPS) through its ‘’Funding Program for World-Leading Innovative R&D on Science and Technology (FIRST Program)”, initiated
by the Council for Science and Technology Policy (CSTP), and Grantin-Aid for Young Scientists Grant (No. 26790052).
References
[1]
[2]
[3]
[4]
Y. Ogimoto et al, Appl. Phys. Lett. 86, 112513 (2005).
T. Hatano et al, Sci. Rep. 3, 2904 (2013).
M. Nakano et al., Nature 487, 459-462 (2012).
C. Zhou et al, Appl. Phys. Lett. 70, 598 (1997).
Nanoantennas for visible and IR radiation
Paolo Biagioni
Dipartimento di Fisica, Politecnico di Milano, Italy
[email protected]
Abstract
In this talk I will first review the fundamental properties and fields
of application of nanoscale optical antennas. I will then report on our
recent results with nonlinear optical processes in non-centrosymmetric
gold nanoantennas and with heavily-doped germanium antennas on silicon for mid-infrared plasmonics and sensing.
Smart plasmonic metal-dielectric
nanostructure for surface enhanced Raman
scattering
A. Lamberti, A. Chiadó, C. Novara, P. Rivolo, F. Geobaldo, F. Giorgis and
Alessandro Virga1
1 C.so
Duca degli Abruzzi 24, DISAT, Politecnico di Torino, Italy
[email protected]
Abstract
Surface enhanced Raman scattering (SERS) is a powerful spectroscopic technique that allows to measure the spectra of molecules at
very low concentrations exploiting the field enhancement and sometimes
charge transfer processes in presence of nanostructured metallic and/or
metal-dielectric surfaces. SERS has been widely applied to material
science, biophysics and medical diagnostics. For each application, the
substrates must be optimized in terms of Raman enhancement, optical
tunability, reproducibility and chemical selectivity.
In this work, we analysed Ag nanoparticles (Ag NPs) synthesized on
different dielectric substrates:
• porous silicon, in which Ag NPs are grown by dip-coating and
ink-jet printing technology (Ag-pSi). [1]
• polydimethylsiloxane membranes decorated with Ag Nps by d.c.
sputtering (Ag-PDMS). [2]
• titania nanotubes with sputtered Ag NPs (Ag-TiO2 ). [3]
• Graphene monolayers decorated with Ag NPs (Ag-GM).
Each kind of such SERS-active substrates exploits intrinsic peculiar
properties: Ag-pSi the huge specific surface area, Ag-PDMS the plasmon tunability taking advantage of the stretchable elastomeric matrix,
Ag-TiO2 and Ag-GM the merging between plasmonic and chemical Raman enhancement. The enhancement factors and their application for
oligonucleotide-based bioassay were critically compared. The morphology of all the discussed substrates were optimized in order to achieve
the lowest Limit of Detection (LOD) with respect to Rhodamine 6G used
as a probe molecule, at the excitation wavelength of 514,5 nm, demonstrating single/few molecule detection regime [2, 4].
In order to evaluate the performances of the solid SERS substrates
in terms of biosensing, an optimized protocol for the immobilization of
oligonucleotides probes on metal-dielectric surfaces was developed. At
the same time, a proper substrate pre-treatment was developed for each
of them, to ensure a good physical-chemical stability and to reduce
the non specific binding of biological species on the surfaces. As a
proof of concept, the immobilization of a model alkylthiol-capped DNA
oligo strand (SH-C6-AAAAAA, PolyA-SH), and the hybridization of its
complementary sequence (UUUUUUU, PolyU) was reported.
Further efforts were devoted to the optimization and standardization
of synthesis and protocols leading to a reproducible and stable sensing
platform integrated in optofluidic devices, that can be fruitfully applied
to biodiagnostics, e.g to the early detection of cancer biomarkers, such
as microRNA sequences.
References
[1]
[2]
[3]
[4]
C.
A.
A.
A.
Novara et al, Nanoscale Research Letter, vol. , 9, p. 527, (2014).
Lamberti et al, RSC Adv., vol. 5, pp. 4404-10, (2015).
Lamberti et al, J. Mat. Chem. C, (submitted).
Virga et al, J. Phys. Chem. C, 117, p 20139, (2013).
Microwave field effect in graphene
Norbert Klein
Imperial college of London, UK
[email protected]
Abstract
A dielectric loaded cavity is employed to study the field effect of CVD
graphene with different gate oxide materials at microwave frequencies.
The bias dependence of the DC sheet resistance is compared with the
bias dependence of the cavity quality factor at about 10 GHz. Prospects
for potential applications in THz wireless communication and imaging
systems are discussed.
The temperature dependence of electric
transport in few-layer graphene under large
charge doping induced by electrochemical
gating: scattering and weak localization
Renato Gonnelli
Dipartimento di Scienza Applicata e Tecnologia, Politecnico di Torino, Italy
[email protected]
Abstract
The temperature dependence of electric transport properties of singlelayer and few-layer graphene at large charge doping is of great interest
both for the study of the scattering processes dominating the conductivity at different temperatures and in view of the theoretically predicted possibility to reach the superconducting state in such extreme
conditions. Here we present the results obtained in 3-, 4- and 5-layer
graphene devices down to 3.5 K, where a large surface charge density up to about 6.8·1014 cm−2 has been reached by employing a novel
polymer electrolyte solution for the electrochemical gating. In contrast
with recent results obtained in single-layer graphene, the temperature
dependence of the sheet resistance between 20 K and 280 K shows a
low-temperature dominance of a T2 component - that can be associated
with electron-electron scattering - and, at about 100 K, a crossover to
the classic electron-phonon regime. Unexpectedly this crossover does
not show any dependence on the induced charge density, i.e. on the
large tuning of the Fermi energy.At very low temperature (< 20 K) a
logarithmic upturn of the sheet resistance is observed that strongly depends on the induced charge density. This behaviour is interpreted in
terms of weak localization of electrons in few-layer graphene, i.e. the
quantum correction to the conductivity due to constructive interference
between pairs of time reversed electron trajectories. From the temperature and magnetic field dependence of this phenomenon and by using
the results of DFT ab-initio calculations we are able to determine all
the scattering times characteristic of few-layer graphene and their dependence on the huge charge doping.
Graphene-enhanced Raman Spectroscopy
on diagnostic biomarkers
P. Esposito, D. Imbraguglio, A. Giovannozzi, and A. M. Rossi
INRiM, Torino, Italy
[email protected]
Abstract
Graphene-enhanced Raman spectroscopy (GERS) is one of the novel
techniques able to significantly increase sensitivity of conventional Raman spectroscopy. As in SERS (surface-enhanced Raman spectroscopy),
a GERS spectrum can display enhanced Raman signals coming even
from very low quantities of molecules spread over nanostructured surfaces. If metal (gold or silver) nanoparticles are generally used with
SERS, the nanostructuration in GERS lies in the one-atom-thick honeycomb ordered nanostructure of graphene. The enhancement of the
Raman signal is supposed, in this case, to originate more from a chemical rather than an electromagnetic mechanism. For this reason, all the
studies and comparisons between these two different kinds of substrates
draw particular interest, when no robust metrological framework exists
at present for none of the two. Graphene, by virtue of its metrological nature, is the ideal building block to start with intercomparisons
measurements.
The chemical mechanism of GERS is based on charge transfers occurring between the molecules adsorbed on the graphene surface and
the underlying carbon atoms. So far, GERS effects have been observed
with fairly complex conjugated and macrocyclic molecules, such as phthalocyanine, rhodamine 6G, protoporphyin IX, or crystal violet [1].
Whatever the Raman probe molecule is, a reproducible deposition
method (able to give an as uniform as possible and thin molecular layer)
is strictly required for studies which aim to precisely determine amounts
of substances present in trace. Various methods can be attempted, like
simple soaking and spin coating, or more sophisticated ones as thermoresistive evaporation. Among them, the drop coating represents a viable alternative since it is cheap, fast and it saves volumes of solutions.
Recently, a simple way to overcome the so-called ‘’coffee-stain” effect
incidental to this technique has been proposed [2]. The formation of
uniform films on these types of substrates is of significant importance as
they are the ones commonly used for graphene deposition and detection,
because of the optical contrast difference.
In the present contribution, we evaluate GERS e ffect for diagnostic biomarkers such as uric acid. They represent an important class
of compounds, whose concentration (e.g. in blood serum) are routinely
measured in clinical laboratories to support early detection and monitoring of disease.
References
[1] X. Ling et al, Nano Lett., vol. 10, pp. 553-561, (2010).
[2] M. Majumder et al, J. Phys. Chem. B, vol. 116, pp. 6536-6542, (2012).
Poster Session
1 - Sylke Bechstein
PTB, Germany
SQUIDs for magnetic detection down to the
nanoscale
2 - Mauro Giorcelli
Politecnico di Torino,
Italy
Polymer/carbon based composites: production and
characterization
3 - Filippo Giubileo
CNR-SPIN, Italy
Contact resistance in graphene based FET
4 - Hao Ling
NPL, UK
Device Development based on CVD Graphene
INRiM, Italy
Employment of nonclassical photon
statistics for the sub-diffraction imaging of
color centers in diamond
6 - Chiara Portesi
INRiM, Italy
Nanostructures of MgB2 thin films towards SQUIDs
fabrication
7 - Ivano Ruo Berchera
Alice Meda
INRiM, Italy
Quantum enhanced optical measurements:
sensitivity beyond classical limits exploiting
quantum correlated states
8 - Andrea Tengattini
Paolo Oliviero
Paolo Traina
INFN, Italy
INFN, Italy
INRiM, Italy
Electrical stimulation of colour centres in diamond
with ion-beam-micromachined sub-superficia
graphitic electrodes
9 - Paolo Traina
Fabrizio Piacentini
Mattia Levi
INRiM, Italy
Heralded sources vs colour-centers-based quantum
emitters in diamond: towards an ideal Single Photon
Source
5 - Ekaterina Moreva
Ivano Ruo Berchera
Paolo Traina
SQUIDs for magnetic detection down to the
nanoscale
Sylke Bechstein
Physikalisch-Technische Bundesanstalt, Berlin, Germany
[email protected]
Abstract
PTB has developed a variety of micro-sized SQUID sensors which
are suitable for magnetic detection at the micro- and nanoscale. Our microSQUIDs are fabricated employing a standard Nb/AlOx/Nb trilayer
process. In order to operate these devices in environmental magnetic
fields they are designed as series gradiometers. Combined with gradiometric excitation coils, susceptibility measurements of small samples as
e.g. magnetic particles can be performed in a frequency range of up to
1MHz. To improve the sensitivity of the susceptometers for the measurement of sub-µm samples, an extra nano-loop can be implemented
in the pickup loop of the devices by using a focused ion beam (FIB) or
e-beam lithography techniques. In order to further optimise both the
flux noise and the filling factor, a family of nano- and microSQUIDs
with nano-scaled Josephson junctions was developed. These Niobium
based SQUIDs contain overdamped superconductor-normal conductorsuperconductor (SNS) Josephson junctions with HfTi as a normal conducting barrier. To make these SQUID devices a tool for practical measurements, auxiliary components as feedback loops, gradiometric transformers and rf filters are integrated. Due to the small loop size √
and the
resulting low loop inductance, a white noise level of 110 nΦ0 / Hz is
achievable. The devices can be operated in an excitation field of up to
a few mT with very low levels of nonlinearity.
Contact resistance in graphene based FET
Filippo Giubileo
CNR-SPIN, Salerno, Italy
[email protected]
Abstract
We study the contact resistance and the transfer characteristics of
back-gated field effect transistors of mono- and bi-layer graphene. We
measure specific contact resistivity for Ni,Ti, and Nb. We show that the
contact resistance is a significant contributor to the total source-to-drain
resistance and it is modulated by the back-gate voltage. We measure
transfer characteristics showing double dip feature that we explain as
the effect of doping due to charge transfer from the contacts causing
minimum density of states for graphene under the contacts and in the
channel at different gate voltage.
Device Development based on CVD
Graphene
Hao Ling1,2 , T. B. Patel1,3 , S. Goniszewski1,2 , R. Pearce1 , O. Shaforost1,2 , ,J. C.
Gallop1 , Jie Chen4 and N. Klein2
1 National
Physical Laboratory, Teddington, Middlessex, TW11 0LW
of Materials, Imperial College London, SW7 2AZ
3 London Centre for Nanotechnology, University College London, WC1H 0AH
4 Department of Mechanical, Aerospace and Civil Engeneering, Brunel Univesrity,
Uxbridge, UB8 3PH
2 Department
Abstract
Graphene consists of a self-supporting single atomic layer of graphite
which was predicted to be thermodynamically unstable as a freestanding
layer. Graphene has high electron mobility, a high intrinsic strength,
high thermal conductivity, good chemical durability and high optical
transparency making it a useful material for several applications. Due
to their low mass, graphene microelectromechanical systems (MEMS)
could, potentially, be used in highly sensitive sensor applications. The
fabrication of graphene based NEMS devices have proven difficult however due to challenges concerning the production of a continuous large
area of single layer graphene grown by chemical vapour deposition
(CVD). The graphene is subsequently transferred onto a patterned, perforated substrate. The graphene must be clean and free of impurities to
produce devices which may be used for sensor applications as this may
result in lower conductivity and any additional mass could result in a
reduced sensitivity.
Employment of nonclassical photon
statistics for the sub-diffraction imaging of
color centers in diamond
I.P. Degiovanni1 , P. Traina1 , D. Gatto Monticone2,3,4 , P. Olivero2,3,4 , J.
Forneris2,3,4 , I. Ruo Berchera1 , G. Brida1 , E. Moreva1 , M. Genovese1,3 and K.
Katamadze5
1 Istituto
2 Physics
Nazionale di Ricerca Metrologica (INRiM), Torino I-10135, Italy
[email protected]
Department and NIS Inter-departmental Centre, University of Torino, Italy
Nazionale di Fisica Nucleare (INFN), Sez. Torino, Italy
4 Consorzio Nazionale Inter-universitario per le Scienze fisiche della Materia
(CNISM), Sez. Torino, Italy
5 M. V. Lomonosov Moscow State University, Russia
3 Istituto
Abstract
The relevance of super-resolution fluorence imaging techniques in
modern optics and photonics is demonstrated by the recent awarding
of the Nobel Prize in Chemistry for 2014 to E. Betzig, S. W. Hell and
W. E. Moerner [1]. Super-resolution techniques such as STimulated
Emission Depletion (STED [2]), Ground State Depletion (GSD [3]) and
PhotoActivated Localization Microscopy (PALM [4]) allow a new class of
microscopy studies in both biological and material science fields, among
which it is worth mentioning the high-resolution imaging of single color
centers in diamond [5].
In this work we demonstrate the application of a novel imaging technique based on the exploitation of photon autocorrelation statistics [6, 7]
to the super-resolution imaging of isolated nitrogen vacancy (NV) emitters in single-crystal diamond [8].
Confocal photoluminescence (PL) microscopy images of NV centres
in bulk CVD diamond were acquired on a pixel-by-pixel basis using a
scanning laser beam. For each pixel, the PL intensity (i.e. IPL(x, y)) was
acquired, together with the values of second- and third-order autocorrelation functions in correspondence of zero delay time (i.e. g(2) (∆t)=0,
x, y) and g(3) (∆t)=0, x, y)).
A substantial resolution enhancement was achieved by mapping proper
polynomial combinations of the above-mentioned quantities, according
to the theoretical predictions. In particular, the results from the mapping
of 2- and 3-center clusters show that the increase in lateral resolution
is in agreement with the theoretical model that predicts a narrowing of
the point spread function proportional to the inverse of the square
root of the highest order of the autocorrelation function measured.
We critically compare the advantages (broader applicability, experimental setup availability, ...) and potential disadvantages (limitations
in the resolution and acquisition time) of this technique with respect to
state-of-the-art super-resolution techniques.
References
[1]
[2]
[3]
[4]
[5]
[6]
[7]
[8]
http://www.nobelprize.org/nobel_prizes/chemistry/laureates/2014/
S. W. Hell et al, J. Opt. Lett. 19, 780 (1994).
S. W. Hell et al, Appl. Phys. B 60, 495 (1995).
E. Betzig et al, Science 313, 1642 (2006).
E. Rittweger et al, Nat. Photonics 3, 144 (2009).
O. Schwarts et al, Phys. Rev. A 85, 033812 (2012).
O. Schwarts et al, Nano Lett. 13, 5832 (2013).
D. Gatto Monticone et al, Phys. Rev. Lett. 113, 143602 (2014).
Quantum enhanced optical measurements:
sensitivity beyond classical limits exploiting
quantum correlated states
I.P. Degiovanni1 , P. Traina1 , A. Meda1 , E. Lopaeva1 , I. Ruo Berchera1 , G. Brida1 ,
M. Genovese1 and S. Olivares2
1 Istituto
2 Physics
Nazionale di Ricerca Metrologica (INRiM), Torino I-10135, Italy
[email protected]
Department - University of Milano, and CNISM UdR Milano Statale,
Milano, Italy.
Abstract
The ultimate limit to sensitivity in standard optical measurements,
ranging from imaging to interferometry, is given by the square root of the
number of photons used. This so called “shot-noise limit” originates from
the intrinsic quantum fluctuation of light field. However it is possible
to build up quantum states in which the fluctuation in one variable of
a conjugated pair is suppressed at the expense of the other (Squeezed
states) or generating bipartite beams in which fluctuations are perfectly
correlated (Twin Beam state). At INRiM, in the quantum optics group, we
have proposed and/or realized several innovative measurement schemes
exploiting such genuine quantum states to elude the shot-noise-limit
and surpassing the performance of standard techniques. We present
three noticeable examples:
• Sub-Shot-Noise Imaging [1]: by exploiting space-time correlations
in Twin Beam [2], it is possible to subtract from a noisy image
of an object obtained by one beam, the correlated noise pattern
measured on the other beam, recovering a noise free image of
the object. Impact of this technique in imaging of photo-sensitive
samples (like certain biological system) is envisaged.
• Quantum Illumination [3]: Twin Beam’s correlations allow detecting a faint target, immersed in a dominant photonic background,
much better than classical correlations can do. This achievement
demonstrates that benefit of quantum correlation and entanglement can survive even in real world, noisy and lossy, application
as a sort of quantum radar.
• Quantum enhanced interferometry [4] : we propose a scheme, consisting of two coupled interferometers injected with quantum light,
to reveal extremely faint phase noise, through a correlation measurement. It has direct application to tests of quantum gravity and
physics at the Planck scale.
References
[1] G. Brida, M. Genovese and I. Ruo Berchera Experimental realization of subshot-noise quantum imaging, Nature Photonics 4, 227 (2010); G. Brida, M.
Genovese, A. Meda, and I. Ruo Berchera Experimental quantum imaging exploiting multimode spatial correlation of twin beams, Phys. Rev. A 83, 033811
(2011).
[2] G. Brida, L. Caspani, A. Gatti, M, Genovese, A. Meda, I. Ruo-Berchera Measurement of sub-shot-noise spatial correlations without background subtraction,
Phys. Rev. Lett. 102 (21), 213602.
[3] E. D. Lopaeva, I. RuoBerchera, I. P. Degiovanni, S. Olivares, G. Brida and M.
Genovese Experimental realization of quantum illumination, Phys. Rev. Lett.
110, 153603 (2013).
[4] I. Ruo Berchera, I. P. Degiovanni, S. Olivares, and M. Genovese Quantum
Light in Coupled Interferometersfor Quantum Gravity Tests, Phys. Rev. Lett.
110, 213601 (2013).
Electrical stimulation of colour centres in
diamond with ion-beam-micromachined
sub-superficia graphitic electrodes
I.P. Degiovanni1 , J. Forneris2,3,4 , P. Traina1 , D. Gatto Monticone2,3,4 , A.
Tengattini2,3,4 , V. Grilj5 , G. Brida1 , G. Amato1 , L. Boarino1 , E. Enrico1 , E.
Moreva1 , N. Skukan5 , M. Jašić5 , C. Verona6 , G. Verona-Rinati6 , M. Genovese1,4
and P. Olivero2,3,4
1 Istituto
2 Physics
Nazionale di Ricerca Metrologica (INRiM), Torino, Italy
[email protected]
Department and NIS Inter-departmental Centre, University of Torino, Italy
3 Istituto Nazionale di Fisica Nucleare, Torino, Italy
4 Consorzio Nazionale Inter-universitario per le scienze fisiche della Materia,
Torino, Italy
5 Department of Industrial Engeneering, University of Roma “Tor Vergata”, Roma,
Italy
6 Laboratory of Ion Beam Interaction,Ruer Bosšković Institute, zagreb, Croazia
.
Abstract
Color centres in diamond are promising candidates for the development of efficient single-photon sourcesand sensors. In particular, the
electrical stimulation of colour centres by a controlled current injection
would enable the development of compact and fully-integrated singlephoton sources on demand. The observation of electrically-stimulated
single-photon emission from neutral nitrogen-vacancy (NV0 ) centers in
diamond was recently reported in p-i-n devices [1, 2], based on articulated fabrication methods relying either on the controlled homoepitaxial
growth of suitably doped layers [1] or on the co-implantation of P and
B dopants [2].
In this work, an ion beam writing technique, relying on the strongly
non-uniform damage profile of MeV ions to selectively graphitize subsuperficial layers in diamond [3, 4], is explored as an alternative strategy
for the fabrication of charge-injecting micro-electrodes. Buried graphitic
electrode pairs with 10 µm spacing were fabricated in the bulk of singlecrystal diamond samples using 6 MeV C3+ and 1.8 MeV He+ microbeams. The electrical characterization of the structures showed low
currents flowing within the inter-electrode gap at low bias values, and
a sudden current increase above an effective voltage threshold.
The electroluminescence and photoluminescence imaging of the devices provided a characterization of the light-emission features of the
devices. The electroluminescence spectral analysis evidenced a bright
emission from native neutrally-charged nitrogen-vacancy centers (NV0 )
and from He-related defects (λZ PL = 536.3 nm, λZ PL = 560.5 nm) in
the device fabricated with the above-mentioned ion specie. Moreover,
the graphitic micro-electrodes were exploited to stimulate single-photon
emission from isolated (NV0 ) centers through the injection of a stable
and non-destructive pump current in the inter-electrode gap.
Future perspectives for the application of the developed devices as
electrically-stimulated single-photon emitters are finally discussed.
References
[1]
[2]
[3]
[4]
N. Mizuochi et al, Nature Photonics, 6, 299 (2012).
A. Lohrmann et al, Appl. Phys. Lett., 99, 251106 (2011).
J. Forneris et al, EPL, 104, 28005 (2013).
F. Picollo et al, Adv. Mater., 25, 4696 (2012).
Heralded sources vs colour-centers-based
quantum emitters in diamond: towards an
ideal Single Photon Source
I.P. Degiovanni1 , P. Traina1 , D. Gatto Monticone2 , F. Piacentini1 , I. Ruo
Berchera1 , G. Brida1 , M. Genovese1 , A. Della Frera3 , A. Tosi3 , A. Bahgat
Shehata3 , E. Moreva1 , C. Scarcella3 , A. Giulinatti3 , M. Ghioni3 , S. V. Polyakov4 ,
P. Olivero2 , A. Migdall4 and A. Giudice5
1 Istituto
Nazionale di Ricerca Metrologica (INRiM), Torino I-10135, Italy
2 Dipartimento
[email protected]
di Fisica, UniversitĂ degli Studi di Torino, Torino I-10125, Italy
3 Politecnico di Milano, I-20133 Milano, Italy
4 Joint Quantum Institute, University of Maryland, and National Institute of
Standards and Technology, Maryland 20899, USA
5 Micro Photon Devices Srl, I-39100 Bolzano, Italy
Abstract
As a consequence of the key role played by single-photon sources
(SPS) in several applications (quantum metrology [1, 2, 3, 4, 5], quantum
information [6, 7], foundations of quantum mechanics [8, 9, 10]), much
interest and effort in improving the performance of such sources [11, 12]
has been observed in recent years.
Due to the deviations from the ideal performance that are always
present in real-world sources, a “true” SPS emitting indistinguishable
single photons (with 100% probability of a single-photon emission and
0% probability of multiple-photon emission) at any arbitrary user-defined
time with arbitrarily fast repetition rate is far to be realized.
In order to obtain ideal single-photon generation it appears reasonable to exploit sources whose nature is deterministic in terms of
single-photon emission (single quantum emitters such as single atoms,
ions, molecules [13, 14], quantum dots [15, 16], or color centers in diamond [18, 19, 20, 21]) as opposed to probabilistic sources (usually
heralded SPS based on parametric down-conversion) [22, 23]. It is true
nonetheless that, in practice, the distinction between deterministic and
probabilistic sources is often relative, because of a pracitcal non unity
extraction efficiency, resulting in probabilistic losses [11, 12].
Here we show INRIM latest efforts regarding “state-of-the-art” SPS
aimed both to the improvement of current heralded SPSs, by realizing
a source of unprecented performance (in terms of extinction of residual background photons and suppression of multiphoton components, as
tagged by a value as low as g2 (0)=0.005(7) without post-selection [24]),
and to the “in-progress” optimization of single-quantum-emitters-based
sources (color centers in diamond) exploiting recently reported centers
with narrow emission line, an excited state lifetime shorter than the one
of NV centres (1 ∼ 2 ns as opposed to 12 ns, allowing a ten-fold photon
emission rate upon saturation) and the polarized emission.
References
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J. C. Zwinkels et al, Metrologia 47, R15 (2010).
W. Schmunket et al, J. Mod. Opt. 58 (14), 1252-1259 (2011).
Roadmap Quantum Optics, Science and Technology Roadmaps for Metrology.
Foresight Reference Document of the Technical Committees of EURAMET (Draft
Update 2012).
R. Thew and N. Gisin, Nature Photon. 1, 165-171 (2007).
J. L. O’Brien et al, Nature Photon. 3, 687-695 (2009).
M. Genovese, Phys. Rep. 413, 319-396 (2005).
G. Brida, et al, Opt. Express, 16, 11750-11758 (2008).
G. Brida et al, Phys. Rev. A 79, 044102 (2009).
S. Scheel, J. Mod. Opt. 56, 141-160 (2009).
M. D. Eisaman et al, Rev. Sci. Instrum. 82, 071101 (2011).
C. Brunel et al, Phys. Rev. Lett. 83, 2722 (1999).
B. Lounis and W. E. Moerner, Nature 407, 491 (2000).
Z. L. Yuan et al, Science 295, 102 (2002).
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A. Zaitzev, Phys. Rev. B 61,12909 (2000).
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E. Wu et al, Optic express, 14, 1296 (2006).
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] S. Faselet et al, New J. Of Phys. 6, 163 (2004).
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ATTENDEES LIST
1
2
name
Avella Alessio
Bechstein Sylke
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
Biagioni Paolo
Bovone Gianmarco
Brida Giorgio
Casaburi Alessandro
Chen Jie
Cristiano Roberto
Degiovanni Pietro Ivo
Delpiano Franco
Esposito Pasquale
Filippo Roberto
Fretto Matteo
Genovese Marco
Gentile Mattia
Giomi Silvia
Giorcelli Mauro
Giorgis Fabrizio
Giubileo Filippo
Gonnelli Renato
Hatano Takafumi
Heikkinen Ville
Kawale Shrikant
Klein Norbert
25
Koehn Claudia
26
27
28
29
30
31
Levi Mattia
Ling Hao
Lolli Lapo
Martucciello Nadia
Meda Alice
Minella Marco
32
33
34
35
36
Monticone Eugenio
Moreva Ekaterina
Olivero Paolo
Paziani Simone
Pellegrino Luca
e-mail
[email protected]
[email protected]
affiliation
INRiM, Torino, Italy
Physikalisch-Technische Bundesanstalt,
Berlin, Germany
[email protected]
Politecnico di Milano, Milano, Italy
[email protected]
CNR-SPIN, Genova, Italy
[email protected]
INRiM, Torino, Italy
[email protected] University of Glasgow, Glasgow, UK
Brunel University, UK
[email protected]
CNR-SPIN, Italy
[email protected]
INRiM, Torino, Italy
[email protected]
Novasis
[email protected]
INRiM, Torino, Italy
[email protected]
INRiM, Torino, Italy
[email protected]
INRiM, Torino, Italy
[email protected]
INRiM, Torino, Italy
[email protected]
[email protected]
INRiM, Torino, Italy
[email protected]
Politecnico di Torino, Torino, Italy
[email protected]
Politecnico di Torino, Torino, Italy
[email protected]
CNR-SPIN, Genova, Italy
[email protected]
Politecnico di Torino, Torino, Italy
[email protected]
Nagoya University, Nagoya, Japan
[email protected]
VTT/MIKES Metrology, Finland
[email protected]
CNR-SPIN, Genova, Italy
[email protected]
Imperial College of London, London,
UK
[email protected]
Physikalisch-Technische Bundesanstalt,
Berlin, German
[email protected]
INRiM, Torino, Italy
[email protected]
National Physical Laboratory, UK
[email protected]
INRiM, Torino, Italy
[email protected]
CNR-SPIN, Salerno, Italy
[email protected]
INRiM, Torino, Italy
[email protected]
Università degli studi di Torino, Torino,
Italy
[email protected]
INRiM, Torino, Italy
[email protected]
INRiM, Torino, Italy
[email protected]
INFN, Torino, Italy
[email protected]
LOT-Oriel, Roma, Italy
[email protected]
CNR-SPIN, Genova, Italy
37
38
39
40
41
42
name
Piacentini Fabrizio
Portesi Chiara
Rajteri Mauro
Ranno Raffaele
Remaggi Federico
Romans Edward
e-mail
[email protected]
[email protected]
[email protected]
[email protected]
[email protected]
[email protected]
43
44
Ruo Berchera Ivano
Schurig Thomas
[email protected]
[email protected]
45
Shaforost Olena
[email protected]
46
47
48
49
50
51
Signorini Fabio
Taralli Emanuele
Tengattini Andrea
Traina Paolo
Virga Alessandro
Ventura Guglielmo
[email protected]
[email protected]
[email protected]
[email protected]
[email protected]
[email protected]
affiliation
INRiM, Torino, Italy
INRiM, Torino, Italy
INRiM, Torino, Italy
CNR-SPIN, Genova, Italy
London Centre for Nanotechnology,
London, UK
INRiM, Torino, Italy
Physikalisch-Technische Bundesanstalt,
Berlin, Germany
Imperial College of London, London,
UK
National Instrument, Milano, Italy
INRiM, Torino, Italy
INFN, Torino, Italy
INRiM, Torino, Italy
Politecnico di Torino, Torino, Italy
CryoVac