Curriculum Vitae of - Università degli Studi di Cassino

Curriculum Vitae of
Dr. Carmine Abbate, Ph.D.
Identity
Name: Carmine
Surname: Abbate
Date of birth: July 5, 1976
Nationality: Italian
Country of residence: Italy
Contact Details
Office:
Mobile:
+39.0776.299.4369
+39 333.472.3848
Qualifications
- Philosophiae Doctor in Electrical and Information Engineering from the University of
Cassino, Italy, in February 2006, with a thesis on Electromagnetic Interference generated
by power IGBT modules in high power converter circuits.
- Degree in Telecommunication Engineering, 110/110, from the University of Cassino, Italy,
in January 2002 with a thesis on “Smart antennas for Wireless Local Loop”.
Career
- Post degree research contract at University of Cassino, Italy, on “Analysis and
characterization of IGBT modules for railway applications operating at the edge of the safe
operating area”, in HIMRATE project, 2002 to 2003;
- Ph.D. course at University of Cassino, 2003 to 2006;
- Research contract at University of Cassino on “Test and development of experimental set
ups for power device characterization at low and high temperatures” and “Series
connection of high power IGBT modules” in INTERMOD project 2007 to 2008;
- Research contract at University of Cassino on “Cosmic Rays Effects on power devices
for innovative switching converter for space applications”, 2007 to 2009;
- Temporary researcher at University of Cassino, Italy, from 2010 to 2015.
Teaching activities
- From 2003 to date: teachings of “Laboratory of Electronics”, “Electronic for
Telecommunications”, “Electronics of Digital Communications” and “Electronics for
Telematics” at degree and master degree in Electrical Engineering, Information
Engineering and Telecommunications Engineering, respectively, at the University of
Cassino;
- Thesis supervisor and co-supervisor of over 40 thesis in Electronic Engineering,
Electrical Engineering and Telecommunications Engineering on topics related to research
topics of interest.
Funded research projects
- Participation in national and European research projects: Research Contract between
DAEIMI, University of Cassino, and the company Ansaldobreda Spa under the Fourth
Framework Program. Project title: "HIMRATE" (2000-2002);
- Participation in national and European research projects: Research Contract between
DAEIMI, University of Cassino, and the Italian Space Agency entitled "Switching
Converters with high efficiency and innovative power devices for space applications"
(2000-2003) ;
- Participation in national and European research projects: Research Contract between
DAEIMI, University of Cassino, and the company Ansaldobreda Spa under the
P.O.N.(L.593/2000). Project title: "TEINTRE" (2002-2005);
- Participation in national and European research projects: Research Contract between
DAEIMI, University of Cassino, and the company Ansaldobreda Spa, entitled "Studies and
qualifications of Presspack IGBT modules and high-voltage isolation", 2007-2008, included
into the Ministry project named "INTERMOD".
Main Collaborations
- ECPE (European Centre for Power Electronics);
- Ansaldobreda Spa.;
- ST Microelectronics;
- Fairchild Semiconductor;
- INFN (Istituto Nazionale di Fisica Nucleare)
- Fermilab, Chicago
Peer-reviewed publications
- Author of 23 publications in international journals and 24 international conference
proceedings;
- Co-author of one invited contribution;
- Author of an international patent.
Research activities
1. Study of reliability and non destructive characterization of power devices in extreme
operating conditions (overload, short circuit, over temperature, very low temperature);
2. Study of mechanisms of instability of power electronic devices in critical conditions (2nd
Breakdown, latch-up, avalanche condition) and drafting of related forecasting models;
3. Design and development of power converters, power pulse generators, and non
destructive testers for power devices;
4. Study, simulation and optimization of new circuit topologies for series connection of
power IGBT modules. Study about the optimization of IGBT commutation. EMI analysis
and modeling in high power devices;
5. Programmable digital hardware for the innovative control of power electronic converters
and custom non-destructive power device testing.
Publication list
Papers on international journals
1.
G. Busatto, L. Fratelli, C. Abbate, R. Manzo, F. Iannuzzo: “Analysis and Optimisation
through Innovative Driving Strategies of High Power IGBT Performances/EMI
Reduction Trade-off for Converter Systems in Railway Applications” Microelectronics
Reliability, Vol. 44, 2004, pp. 1443-1448.
2.
C. Abbate, G. Busatto, L. Fratelli, F. Iannuzzo: “The High Frequency Behavior of High
Voltage and Current IGBT Modules”, Microelectronics Reliability, Vol.46, 2006,
pp.1848-1853.
3.
F. Iannuzzo, G. Busatto, C. Abbate: “Investigation of MOSFET failure in soft-switching
conditions”, Microelectronics Reliability, Vol.46, 2006, pp.1790-1794.
4.
C. Abbate, G. Busatto, L. Fratelli, F. Iannuzzo, B. Cascone, R. Manzo: “The
Robustness of Series Connected High Power IGBT Modules”, Microelectronics
Reliability, Vol. 47, 2007, pp.1746-1750.
5.
G. Busatto, C. Abbate, B. Abbate, F. Iannuzzo: “IGBT Modules Robustness During
Turn-Off Commutation”, Microelectronics Reliability, Vol 48, 2008, pp. 1435-1439.
6.
G. Busatto, C. Abbate, F. Iannuzzo, P. Cristofaro: “Instable Mechanisms During
Unclamped Operation of High Power IGBT Modules”, Microelectronics Reliability, Vol
49, 2009, pp. 1363-1369.
7.
C. Abbate, G. Busatto, F. Iannuzzo: “High Voltage, High Performance Switch using
Series Connected IGBTs”, Power Electronics, IEEE Transactions on Volume: 25 ,
Issue: 9 Digital Object Identifier: 10.1109/TPEL.2010.2049272 Publication Year: 2010
, pp. 2450-2459.
8.
C. Ronsisvalle, V. Enea, C. Abbate, G. Busatto, A. Sanseverino: Perspective
Performances of MOS-Gated GTO in High-Power Applications, IEEE Trans. Electron
Devices, Vol. ED- 57, p. 2339-2343, September 2010.
9.
C. Abbate, G. Busatto, F. Iannuzzo, “IGBT RBSOA non-destructive testing methods:
Analysis and discussion”, Microelectronics Reliability, Volume 50, Issues 9-11,
September-November 2010, Pages 1731-1737, ISSN 0026-2714, DOI:
10.1016/j.microrel.2010.07.050.
10. C. Abbate, G. Busatto, F. Iannuzzo, "Operation of SiC normally-off JFET at the edges
of its safe operating area", Microelectronics Reliability, Volume 51, Issues 9-11,
September-November 2011, Pages 1767-1772, ISSN 0026-2714, DOI:
10.1016/j.microrel.2011.07.055.
11. C. Abbate, G. Busatto, F. Iannuzzo, “Unclamped repetitive stress on 1200 V normallyoff SiC JFETs”, Microelectronics Reliability, Volume 52, Issues 9–10, September–
October
2012,
Pages
10.1016/j.microrel.2012.06.097.
2420-2425,
ISSN
0026-2714,
DOI:
12. C. Abbate, M. Alderighi, S. Baccaro, G. Busatto, M. Citterio, P. Cova, N. Belmonte, V.
De Luca, S. Fiore, S. Gerardin, E. Ghisolfi, F. Giuliani, F. Iannuzzo, A. Lanza, S.
Latorre, M. Lazzaroni, G. Meneghesso, A. Paccagnella, F. Rampazzo, M. Riva, A.
Sanseverino, R. Silvestri, G. Spiazzi,F. Velardi, E. Zanoni, “Developments on DC/DC
converters for the LHC experiment upgrades”, Journal of Instrumentation 9 (02),
C02017, 2014.
13. C. Abbate, G. Busatto, F. Iannuzzo, C. Ronsisvalle, A. Sanseverino, F. Velardi,
“Scattering parameter approach applied to the stability analysis of power IGBTs in
Short Circuit” Microelectronics Reliability Vol.53, Issue9-11, 2013, pp.1707-1712.
14. C. Abbate, G. Busatto, F. Iannuzzo,“ Thermal Instability during Short Circuit of
Normally-Off AlGaN/GaN HFETs” Microelectronics Reliability Vol.53, Issue9-11, 2013.
15. F. Iannuzzo, G. Busatto, C. Abbate, “Instabilities in Silicon Power Devices: A Review
of Failure Mechanisms in Modern Power Devices”, IEEE Industrial Electronics
Magazine, 2014, IEEE 8 (3), pp. 28-39.
16. C. Abbate, G. Busatto, P. Cova, N. Delmonte, F. Giuliani, F. Iannuzzo, A.
Sanseverino, F. Velardi, “Thermal damage in SiC Schottky diodes induced by SE
heavy ions”, Microelectronics Reliability 54 (9), pp. 2200-2206, 2014.
17. C. Abbate, F. Iannuzzo, G. Busatto, A. Sanseverino, F. Velardi, C. Ronsisvalle, J
Victory, “Turn-off instabilities in large area IGBTs”, Microelectronics Reliability 54 (9),
pp. 1927-1934, 2014.
18. C. Abbate , R. Di Folco, “High Frequency Behavior of High Power IGBT
Modules”, Universal Journal of Electrical and Electronic Engineering, 3 , 17 - 23. doi:
10.13189/ujeee.2015.030104, 2015.
19. C. Abbate, R. Di Folco , A. Evangelista, “Multi-baseline SAR Interferometry using
Elaboration of Amplitude and Phase Data”. Universal Journal of Electrical and
Electronic Engineering, 3 , 55 - 63., 2015, doi: 10.13189/ujeee.2015.030204.
20. C. Abbate, R. Di Folco, “Modelling and Analysis of EMI Generated of Power IGBT
Modules”. Universal Journal of Electrical and Electronic Engineering, 3 , 49 – 54,
2015,. doi: 10.13189/ujeee.2015.030203.
21. C. Abbate, G. Busatto, P. Cova, N. Delmonte, F. Giuliani, F. Iannuzzo, A.
Sanseverino, F. Velardi: “Analysis of heavy ion irradiation induced thermal damage in
SiC Schottky diodes”, Transaction on Nuclear Science, 202-209, 2015.
22. C. Abbate, G. Busatto, F. Iannuzzo, S. Mattiazzo, A. Sanseverino L. Silvestrin, D.
Tedesco, F. Velardi: “Experimental Study of Single Event Effects Induced by
Heavy Ion Irradiation in Enhancement Mode GaN Power HEMT” in fase di
pubblicazione su Microelectronics Reliability 2015.
23. C. Abbate, G. Busatto, A. Sanseverino, F. Velardi, C. Ronsisvalle: “Analysis of Low
and High Frequency Oscillations in IGBTs during Turn on Short Circuit” Trans. on
Electron Devices, pp. 2952 – 2958, 2015, DOI: 10.1109/TED.2015.2459135.
Contributions to international conferences
24. G. Busatto, C. Abbate, B. Cascone, R. Manzo, L. Fratelli, G. Giannini, F. Iannuzzo, F.
Velardi; “Characterisation of high-voltage IGBT modules at high temperature and high
currents,” The Fifth International Conference on Power Electronics and Drive
Systems, 2003. PEDS 2003. Volume: 2 , pp. 1391 – 1396, 17-20 November 2003.
25. R. Manzo, G. Busatto, L. Fratelli, G. Giannini, R. Nisci, C. Abbate, “Optimization of
High-Voltage IGBT Modules Turn-on on Inductive Load” Proc. 10th European
Conference on Power Electronics and Applications, EPE 2003, September 2003.
26. C. Abbate, R. Manzo, F. Iannuzzo, B. Cascone, G. Busatto, G. Giannini, “Driving
optimization of high voltage IGBT modules for traction application” SPEEDAM’2004,
Capri (Italy), June 16-18, 2004.
27. C. Abbate, G. Busatto, R. Manzo, L. Fratelli, B. Cascone, G. Giannini, F. Iannuzzo,
“Experimental Optimisation of high power IGBT Modules Performances Working at
the Edges of their Safe Operating Area” Proc. IEEE Power Electronics Specialist
Conference, PESC 2004, pp. 2588-2592, June, 2004.
28. G. Busatto, C. Abbate, F. Iannuzzo, L. Fratelli, B. Cascone, G. Giannini: “EMI
Characterisation of high power IGBT modules For Traction Application” Power
Electronics Specialists Conference, 2005, PESC 05, Record 36th, pp. 2180-2186,
Recife – Brazil, June 2005.
29. C. Abbate, G. Busatto, L. Fratelli, F. Iannuzzo: “The Role of IGBT Module in
Electromagnetic Noise Emission of Power Converters” ESREF’05, 10-14 October
2005, Arcachon, Francia.
30. G. Busatto, C. Abbate, L. Fratelli, F. Iannuzzo, G. Giannini, B. Cascone: “EMI Analysis
in High power Converters for Traction Application” EPE 2005, 11-14 September 2005,
Dresden, Germany, ISBN: 90-75815-08-5.
31. C. Abbate, G. Busatto, L. Fratelli, F. Iannuzzo, B. Cascone, G. Giannini: “Series
Connection of High Power IGBT modules for traction applications” EPE 2005, 11-14
September 2005, Dresden, Germania, ISBN: 90-75815-08-5.
32. C. Abbate, G. Busatto, L. Fratelli, F. Iannuzzo: “Experimental - Simulative procedure
to Predict the EMI Generated in High Power Converters based on IGBT modules”,
CIPS 2006, pp. 117-122, Naples, Italy.
33. C. Abbate, G. Busatto, F. Iannuzzo, L. Fratelli: “Experimental Characterisation of High
Efficiency Resonant Gate Driver Circuit”, EPE 2007, 2-5 September 2007, Aalborg,
Denmark, pp. 1-8, digital object: 10.1109/EPE.2007.4417585.
34. C. Abbate, M. Morozov, G. Rubinacci, A. Tamburrino, S. Ventre: “A probe array for
fast quantitative eddy current imaging”, in E’NDE, Electromagnetic Non-destructive
Evaluation (X), S. Takahashi and H. Kikuchi (Eds.), pp. 75-82, IOS Press, 2007.
35. G. Busatto, C. Abbate, B. Abbate, F. Iannuzzo: “Non-Destructive Experimental
Investigation about RBSOA in High Power IGBT Modules”, CIPS 2008, 11-13 March,
2008, Nuremberg, Germany.
36. G. Busatto, C. Abbate, F. Iannuzzo, B. Abbate, L. Fratelli, B. Cascone, R. Manzo:
“High Voltage, High Performance Switch using Series Connected IGBTs”,
PESC2008, 15-19 June 2008, Rhodes, Greece, pp. 1606-1611.
37. C. Abbate, G. Busatto, F. Iannuzzo: “The Effects of the Stray Elements on the Failure
of Parallel Connected IGBTs during Turn-Off”, EPE2009, 8-10 September 2009,
Barcelona, Spain, pp 1-9, ISBN: 9789075815009.
38. C. Ronsisvalle, V. Enea, C. Abbate, G. Busatto, A. Sanseverino: “Performances of
MOS-Gated GTO in High Voltage Power Applications”, EPE2009, 8-10 September
2009, Barcelona, Spain, pp. 1-8, ISBN: 9789075815009.
39. C. Ronsisvalle, V. Enea, C. Abbate, G. Busatto, A. Sanseverino: “MOS-Gated GTO: a
new functionally integrated device suitable for high voltage power applications”,
CIPS2010, 16-18 March 2010, Nuremberg.
40. C. Abbate, G. Busatto, F. Iannuzzo, C. Pagliarone, G.M. Piacentino, F. Bedeschi,
“Comparison among eligible topologies for MARX klystron modulators,” Proc. 1st
International Particle Accelerator Conference, IPAC’10, pp. 3284-3286, Kyoto –
Japan (ISBN 978-92-9083-352-9).
41. C. Abbate, G. Busatto, A. Sanseverino, F. Velardi, C. Ronsisvalle, H. Fischer, K.S.
Park: “High Frequency Capacitive behavior of field stop trench gate IGBTs operating
in Short Circuit”, Proc. of Applied Power Electronics Conference, pp. 183-188, 2013,
DOI: 10.1109/ APEC.2013.6520205.
42. C. Abbate, G. Busatto, A. Sanseverino, C. Ronsisvalle,Experimental and Numerical
Study of Low and High Frequency Oscillations in IGBTs during Short Circuit, PCIM
2014, Nuremberg.
43. S. Fiore, C. Abbate, S. Baccaro, G. Busatto,M. Citterio, F. Iannuzzo, A. Lanza, S.
Latorre, M. Lazzaroni, A. Sanseverino, F. Velardi “Radiation and magnetic field
effects on new semiconductor power devices for HL-LHC experiments”, 14th ICAPTT
Conference on Astroparticle, Particle, Space Physics and Detectors for Physics and
Applications, Villa Olmo (Como-Italia) 23-27 September 2013.
44. C. Abbate, M. Alderighi, S. Baccaro, G. Busatto, M.Citterio, P. Cova, N. Delmonte, V.
De Luca, S. Fiore, S. Gerardin, E. Ghisolfi, F. Giuliani, F. Iannuzzo, A. Lanza, S.
Latorre, M. Lazzaroni, G. Meneghesso, A. Paccagnella, F. Rampazzo, M.Riva, A.
Sanseverino, R. Silvestri, G. Spiazzi,F. Velardi, E. Zanoni, “Radiation performance of
new semiconductor power devices for the LHC experiment upgrades”, 11th
International Conference on Large Scale Applications and Radiation Hardness of
Semiconductor Detectors, RD13, 3-5 July 2013.
45. C. Abbate, G. Busatto, A. Sanseverino, C. Ronsisvalle, “Experimental and Numerical
Study of Low and High Frequency Oscillations in IGBTs during Short Circuit”, PCIM
Europe 2014; International Exhibition and Conference for Power, pp. 1–8, 2014.
46. N. Bonora, A. Ruggiero, G. Iannitti, C. Abbate, F. Iannuzzo, G. Busatto,
“Mechanoluminescence of nylon under high velocity impact”, Journal of Physics:
Conference Series 500 (18), 182005, 2014.
47. C. Abbate, S. Baccaro, G. Busatto, M. Citterio, P. Cova, N. Delmonte, V. De Luca, S.
Fiore, F. Giuliani, F. Iannuzzo, A. Lanza, S. Latorre, M. Lazzaroni, A. Sanseverino, G.
Spiazzi, F. Velardi, “Testing integrated COTS DC/DC converters in hostile
environment”, Common ATLAS CMS electronics workshop for LHC upgrades: ACES,
2014.
48. C. Abbate, R. Di Folco, I. De Bellis and Z. Varga, Stability Analysis of IGBT based on
Simulation and Measurement of Scatter Parameters, Mechanical Engineering
Letters, Vol. 13 (2015), 97-105.
Invited contributions
49. G. Busatto, C. Abbate, F. Iannuzzo, “Non Destructive SOA Testing of Power Modules”
(Invited paper), 6th International Conference on Integrated Power Electronics
Systems, CIPS 2010, Nuremberg, Germany, March 16-18 2010.
International Patents
50. WO 2014097261 A3: Method for Driving Inverters, and Inverter Adapted to Reduce
Switching Losses.